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Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

机译:边缘耦合器具有放松的对齐容差,适用于贴片混合   III-V激光器与sOI波导的集成

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摘要

We report on two edge-coupling and power splitting devices for hybridintegration of III-V lasers with sub-micrometric silicon-on-insulator (SOI)waveguides. The proposed devices relax the horizontal alignment tolerancesrequired to achieve high coupling efficiencies and are suitable for passivelyaligned assembly with pick-and-place tools. Light is coupled to two on-chipsingle mode SOI waveguides with almost identical power coupling efficiency, butwith a varying relative phase accommodating the lateral misalignment betweenthe laser diode and the coupling devices, and is suitable for theimplementation of parallel optics transmitters. Experimental characterizationwith both a lensed fiber and a Fabry-P\'erot semiconductor laser diode has beenperformed. Excess insertion losses (in addition to the 3 dB splitting) taken asthe worst case over both waveguides of respectively 2 dB and 3.1 dB, as well asexcellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and3.8 um (worst case over both in-plane axes) have been measured for the twodevices. Back-reflections to the laser are below -20 dB for both devices withinthe 1 dB misalignment range. Devices were fabricated with 193 nm DUV opticallithography and are compatible with mass-manufacturing with mainstream CMOStechnology.
机译:我们报告了用于III-V激光器与亚微米级绝缘体上硅(SOI)波导的混合集成的两个边缘耦合和功率分配装置。拟议中的设备放宽了实现高耦合效率所需的水平对准公差,适用于采用取放工具进行被动对准的组装。光以几乎相同的功率耦合效率耦合到两个芯片上单模SOI波导,但是具有变化的相对相位,以适应激光二极管和耦合器件之间的横向未对准,并且适合于实现并行光学发射器。对透镜光纤和Fabry-P'erot半导体激光二极管均进行了实验表征。在两个波导上,最坏的情况是过剩的插入损耗(除了3 dB的分裂之外),分别是2 dB和3.1 dB,以及水平方向的失配误差分别为2.8 um和3.8 um(在两个波导中最差的情况) -平面轴)已针对两个设备进行了测量。在1 dB失准范围内,两个器件的激光背向反射均低于-20 dB。器件采用193 nm DUV光刻技术制造,并且与主流CMOS技术的批量生产兼容。

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